TBD62785AFWG(Z,EHZ

TBD62785AFWG(Z,EHZ is a TBD62785A series BiCD silicon monolithic integrated circuit. It has a clamp diode for switching inductive loads built-in each output.

• 8-ch low active source type DMOS transistor array
• High output voltage is 50V (max, Ta = 25°C), large output current is -500mA (max,per 1 ch, Ta=25°C)
• Input voltage range from 0 to VCC-3.5V (Ta = -40 to 85°C, IOUT = -100mA or more, VDS=2V)
• Clamp diode forward current is 400mA (max, Ta = -40 to 85°C)
• Output leakage current is 1.0μA (max, VCC = 5.5V, VIN = VCC, Ta = 85°C)
• Current consumption is 4.0mA (max, VCC = 5.5V, VIN = 0V, Output OPEN, per 1 ch)
• Clamp diode forward voltage is 2.0V (max, IF = 350mA, Ta = 25°C)
• Turn on delay is 0.2μs (typ, VCC = 5.5V, RL = 16ohm, CL = 15pF)
• Turn off delay is 1.3μs (typ, VCC = 5.5V, RL = 16ohm, CL = 15pF)
• P-SOP18-0812-1.27-001 package, operating temperature range from -40 to 85°C

Remarques

Please be careful about thermal conditions during use.