PWD13F60TR

PWD13F60TR is a high-density power driver. This driver has four N-channel power MOSFETs in dual half bridge configuration. The integrated power MOSFETs have low RDS(on) of 320mohm and 600V drain-source breakdown voltage. while the embedded gate drivers high side can be easily supplied by the integrated bootstrap diode. The high integration of the driver allows efficiently to drive loads in a tiny space. The input pins has extended range it allows an easy interfacing with microcontrollers, DSP units or hall effect sensors. This driver is widely used in applications such as motor drivers for industrial and home appliances, factory automation, fans and pumps, HID, ballasts, power supply units, DC-DC and DC-AC converters.

• Suitable for operating as full bridge and dual independent half bridges
• Driver supply voltage is 6.5V
• UVLO protection on supply voltage
• 3.3V to 15V compatible inputs with hysteresis and pull-down
• Interlocking function to prevent cross conduction
• Internal bootstrap diode
• Very compact and simplified layout
• Flexible, easy and fast design
• Junction temperature range is -40°C to +150°C
• Case style is VFQFPN 10 x 13 x 1.0mm