FDB33N25TM
MOSFET de puissance, Canal N, 250 V, 33 A, 0.077 ohm, TO-263AB, Montage en surface
1 600 Vous pouvez réserver des unités dès maintenant
| Quantité | Prix (hors TVA) |
|---|---|
| 1+ | 2,680 € |
| 10+ | 1,830 € |
| 100+ | 1,210 € |
| 500+ | 1,190 € |
| 1000+ | 0,941 € |
Informations produit
Aperçu du produit
The FDB33N25TM is a 250V N-channel UniFET™ MOSFET based on planar stripe and DMOS technology. This high voltage MOSFET is tailored to reduce on-state resistance and to provide better switching performance and higher avalanche energy strength. The body diode's reverse recovery performance of UniFET FRFET® MOSFET has been enhanced by lifetime control. Its trr is less than 100ns and the reverse dv/dt immunity is 15V/ns while normal planar MOSFETs have over 200ns and 4.5V/ns respectively. Therefore, it can remove additional component and improve system reliability in certain applications in which the performance of MOSFET's body diode is significant. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. This product is general usage and suitable for many different applications.
- Low gate charge
- 100% Avalanche tested
Spécifications techniques
Canal N
33A
TO-263AB
10V
235W
150°C
-
Lead (27-Jun-2024)
250V
0.077ohm
Montage en surface
3V
3Broche(s)
-
MSL 1 - Illimité
Documents techniques (2)
Produits associés
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Législation et Questions environnementales
Pays dans lequel la dernière étape de production majeure est intervenuePays d'origine :China
Pays dans lequel la dernière étape de production majeure est intervenue
RoHS
RoHS
Certificat de conformité du produit