FDA59N30
MOSFET de puissance, Canal N, 300 V, 59 A, 0.047 ohm, TO-3P, Traversant
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| Quantité | Prix (hors TVA) |
|---|---|
| 1+ | 4,920 € |
| 10+ | 4,090 € |
| 100+ | 2,140 € |
| 500+ | 1,960 € |
| 1000+ | 1,940 € |
Informations produit
Aperçu du produit
The FDA59N30 is a 300V N-channel UniFET™ MOSFET based on planar stripe and DMOS technology. This high voltage MOSFET is tailored to reduce on-state resistance and to provide better switching performance and higher avalanche energy strength. The body diode's reverse recovery performance of UniFET FRFET® MOSFET has been enhanced by lifetime control. Its trr is less than 100ns and the reverse dv/dt immunity is 15V/ns while normal planar MOSFETs have over 200ns and 4.5V/ns respectively. Therefore, it can remove additional component and improve system reliability in certain applications in which the performance of MOSFET's body diode is significant. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. This product is general usage and suitable for many different applications.
- Low gate charge
- 100% Avalanche tested
Spécifications techniques
Canal N
59A
TO-3P
10V
500W
150°C
-
Lead (27-Jun-2024)
300V
0.047ohm
Traversant
5V
3Broche(s)
-
-
Documents techniques (2)
Législation et Questions environnementales
Pays dans lequel la dernière étape de production majeure est intervenuePays d'origine :China
Pays dans lequel la dernière étape de production majeure est intervenue
RoHS
RoHS
Certificat de conformité du produit