MMZ09332BT1

MMZ09332BT1 is a 2--stage, high linearity InGaP HBT broadband amplifier designed for femtocell, picocell, smart grid, W--CDMA, TD--SCDMA and LTE wireless broadband applications. It provides exceptional linearity for LTE and W-CDMA air interfaces with an ACPR of -50 dBc at an output power of up to 23dBm covering frequencies from 130 to 1000MHz. It operates from a supply voltage of 3 to 5V. The amplifier requires minimal external matching and offers state of the art reliability, ruggedness, temperature stability and ESD performance.

• Frequency range from 130 to 1000MHz
• P1dB is 33dBm, 450 to 1000MHz and OIP3 is up to 48dBm at 900MHz
• Excellent linearity
• Active bias control (adjustable externally)
• Single 3 to 5V supply
• Single ended power detector
• 1200mA total supply current
• 29dBm RF input power
• 12 lead HVQFN package
• 175°C junction temperature

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