IRF5210S
MOSFET de puissance, Canal P, 100 V, 38 A, 0.06 ohm, TO-263, Montage en surface
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| Quantité | Prix (hors TVA) |
|---|---|
| 100+ | 1,290 € |
| 500+ | 0,904 € |
| 1000+ | 0,646 € |
| 5000+ | 0,565 € |
Informations produit
Aperçu du produit
The IRF5210S is a high-performance P-channel MOSFET optimized for power switching and management in demanding applications. With a low R��������(��������) of 0.08٠(typical) and a high drain current capability of -33A, it provides efficient operation with minimal power loss. Its robust design ensures reliable performance in high-power circuits. The IRF5210S is ideal for applications such as motor control, DC-DC converters, power inverters, and battery protection systems. Encased in a D2PAK (TO-263) package, it offers excellent thermal performance and ease of integration, making it a dependable choice for automotive, industrial, and consumer electronic systems requiring reliable and efficient power management solutions.
- VDS (V) =100V
- ID =-38A
- RDS(ON) = 60mΩ @ VGS =-10V
- Ultra Low On-Resistance
- Fast Switching
- Advanced Process Technology
Spécifications techniques
Canal P
38A
TO-263
10V
170W
150°C
0
100V
0.06ohm
Montage en surface
4V
3Broche(s)
Multicomp Pro Power MOSFETs
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Documents techniques (1)
Législation et Questions environnementales
Pays dans lequel la dernière étape de production majeure est intervenuePays d'origine :China
Pays dans lequel la dernière étape de production majeure est intervenue
RoHS
Certificat de conformité du produit