MT29F2G08ABAEAWP:E
Mémoire Flash, SLC NAND, 2 Gbit, 256M x 8 bits, Parallèle, TSOP-I, 48 Broche(s)
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| Quantité | Prix (hors TVA) |
|---|---|
| 1+ | 2,310 € |
| 10+ | 2,150 € |
| 25+ | 2,090 € |
| 50+ | 2,040 € |
| 100+ | 1,990 € |
| 250+ | 1,930 € |
| 500+ | 1,900 € |
| 1000+ | 1,860 € |
Informations produit
Aperçu du produit
MT29F2G08ABAEAWP:E is a NAND flash memory. This NAND flash device includes an asynchronous data interface for high-performance I/O operations. This device uses a highly multiplexed 8-bit bus (I/Ox) to transfer commands, address, and data. A target is the unit of memory accessed by a chip enable signal. A target contains one or more NAND flash dies. A NAND flash die is the minimum unit that can independently execute commands and report status. This device has an internal 4-bit ECC that can be enabled using the GET/SET features.
- Open NAND flash interface (ONFI) 1.0-compliant
- Single-level cell (SLC) technology
- Command set: ONFI NAND flash protocol
- Operation status byte provides software method for detecting: operation completion
- Pass/fail condition, write-protect status
- Ready/Busy# (R/B#) signal provides a hardware method of detecting operation completion
- RESET (FFh) required as first command after power-on
- Alternate method of device initialization (Nand-Init) after power up (contact factory)
- 3.3V (2.7 to 3.6V) operating voltage range
- 48-pin TSOP package, 0°C to +70°C commercial operating temperature range
Spécifications techniques
SLC NAND
256M x 8 bits
TSOP-I
-
2.7V
3.3V
0°C
3.3V Parallel NAND Flash Memories
No SVHC (17-Dec-2015)
2Gbit
Parallèle
48Broche(s)
16ns
3.6V
Montage en surface
70°C
MSL 3 - 168 heures
Documents techniques (1)
Législation et Questions environnementales
Pays dans lequel la dernière étape de production majeure est intervenuePays d'origine :Singapore
Pays dans lequel la dernière étape de production majeure est intervenue
RoHS
RoHS
Certificat de conformité du produit