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Quantité | Prix (hors TVA) |
---|---|
1+ | 2,560 € |
25+ | 2,500 € |
100+ | 2,440 € |
250+ | 2,360 € |
Informations produit
Aperçu du produit
The SST39SF040-70-4C-NHE is a 4MB multi-purpose Flash Device with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunnelling injector attain better reliability and manufacturability compared with alternate approaches. The SST39SF040 write (program or erase) with a 4.5 to 5.5V power supply and conforms to JEDEC standard pinouts for x8 memories. The SST39SF040 device provide a maximum Byte-Program time of 20μs. This device use toggle bit or data# polling to indicate the completion of program operation. To protect against inadvertent write, they have on-chip hardware and software data protection schemes. The SST39SF040 device is suited for applications that require convenient and economical updating of program, configuration or data memory. For all system applications, they significantly improve performance and reliability, while lowering power consumption.
- Superior reliability - 100000 cycles (typical) endurance and greater than 100-year data retention
- Low power consumption
- Sector-erase capability - Uniform 4kB sectors
- Latched address and data
- Automatic write timing - Internal VPP generation
- Fast erase and byte-program
- End-of-write detection
Spécifications techniques
NON-OU Parallèle
512K x 8 bits
LCC
14MHz
4.5V
5V
0°C
5V Parallel NOR Flash Memories
No SVHC (21-Jan-2025)
4Mbit
Parallèle
32Broche(s)
70ns
5.5V
Montage en surface
70°C
MSL 3 - 168 heures
Documents techniques (2)
Produits de remplacement pour SST39SF040-70-4C-NHE
2 produit(s) trouvé(s)
Législation et Questions environnementales
Pays dans lequel la dernière étape de production majeure est intervenuePays d'origine :United States
Pays dans lequel la dernière étape de production majeure est intervenue
RoHS
RoHS
Certificat de conformité du produit