300 Vous pouvez réserver des unités dès maintenant
Quantité | Prix (hors TVA) |
---|---|
1+ | 2,290 € |
25+ | 2,250 € |
100+ | 2,210 € |
250+ | 2,110 € |
Informations produit
Aperçu du produit
The SST39SF020A-70-4I-NHE is a 2MB CMOS multi-purpose Flash Memory manufactured with SSTs proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The device writes with a 4.5 to 5.5V power supply. Featuring high performance byte-program, the device provides a maximum byte-program time of 20µsec. This device uses toggle bit or data# polling to indicate the completion of program operation. To protect against inadvertent write, it has on-chip hardware and software data protection schemes. Designed, manufactured and tested for a wide spectrum of applications, this device is offered with a guaranteed typical endurance of 100000 cycles. Data retention is rated at greater than 100 years.
- Superior reliability
- Low power consumption
- Sector-erase capability - uniform 4Kbyte word sectors
- Fast read access time - 70ns
- Latched address and data
- Automatic write timing - internal VPP generation
- Fast erase and byte-program
- End-of-write detection
- TTL I/O compatibility
Avertissements
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Spécifications techniques
NON-OU Parallèle
256K x 8 bits
LCC
-
4.5V
5V
-40°C
5V Parallel NOR Flash Memories
No SVHC (21-Jan-2025)
2Mbit
Parallèle
32Broche(s)
70ns
5.5V
Montage en surface
85°C
MSL 3 - 168 heures
Documents techniques (3)
Produits de remplacement pour SST39SF020A-70-4I-NHE
2 produit(s) trouvé(s)
Législation et Questions environnementales
Pays dans lequel la dernière étape de production majeure est intervenuePays d'origine :Japan
Pays dans lequel la dernière étape de production majeure est intervenue
RoHS
RoHS
Certificat de conformité du produit