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Quantité | Prix (hors TVA) |
---|---|
1+ | 3,070 € |
10+ | 2,310 € |
25+ | 2,080 € |
50+ | 1,850 € |
100+ | 1,760 € |
250+ | 1,670 € |
500+ | 1,610 € |
1000+ | 1,560 € |
Informations produit
Aperçu du produit
IXDN609YI is a 9-ampere low-side ultrafast MOSFET high-speed gate driver. It is especially well suited for driving the latest IXYS MOSFETs and IGBTs. The IXD_609 high-current output can source and sink 9A of peak current while producing voltage rise and fall times of less than 25ns. The input is CMOS compatible, and is virtually immune to latch-up. Proprietary circuitry eliminates cross-conduction and current “shoot-through.” Low propagation delay and fast, matched rise and fall times make the ideal for high-frequency and high-power applications. Application includes efficient power MOSFET and IGBT switching, switch mode power supplies, motor controls, DC to DC converters, class-D switching amplifiers, pulse transformer driver.
- 5-pin TO-263 package type
- Wide operating voltage range from 4.5V to 35V
- Operating temperature range from -40°C to +125°C
- Logic input withstands negative swing of up to 5V
- Matched rise and fall times, low propagation delay time
- Low 10µA supply current, low output impedance
- Configured as a non-inverting driver
Spécifications techniques
1Canal(aux)
Low Side
5Broche(s)
Montage en surface
9A
4.5V
-40°C
40ns
-
MSL 3 - 168 heures
-
IGBT / MOSFET
TO-263 (D2PAK)
Non Inverseur
9A
35V
125°C
42ns
-
To Be Advised
Documents techniques (2)
Législation et Questions environnementales
Pays dans lequel la dernière étape de production majeure est intervenuePays d'origine :China
Pays dans lequel la dernière étape de production majeure est intervenue
RoHS
RoHS
Certificat de conformité du produit