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Quantité | Prix (hors TVA) |
---|---|
1+ | 131,030 € |
5+ | 124,490 € |
10+ | 117,940 € |
Informations produit
Aperçu du produit
CY14B116N-ZSP25XI is a CY14B116N fast SRAM, with a non-volatile element in each memory cell. The embedded non-volatile elements incorporate QuantumTrap technology, producing the world’s most reliable non-volatile memory. The SRAM can be read and written an infinite number of times. The non-volatile data residing in the non-volatile elements do not change when data is written to the SRAM. Data transfers from the SRAM to the non-volatile elements (the STORE operation) takes place automatically at power-down. On power-up, data is restored to the SRAM (the RECALL operation) from the non-volatile memory.
- 16Mbit non-volatile static random access memory (nvSRAM)
- Hands-off automatic STORE on power-down with only a small capacitor
- STORE to QuantumTrap non-volatile elements is initiated by software
- RECALL to SRAM initiated by software or power-up, high reliability
- Infinite read, write, and RECALL cycles, 1 million STORE cycles to QuantumTrap
- Sleep mode operation, low power consumption, active current of 75mA at 45ns
- Industrial temperature range from –40°C to +85°C
- 25ns speed, 54-pin TSOP II speed
- 3V voltage rating, ×16 data bus
Spécifications techniques
16Mbit
1M x 16bits
25ns
2.7V
TSOP-II
54Broche(s)
Parallèle
-40°C
-
16Mbit
1M x 16bits
25ns
3.6V
TSOP-II
Parallèle
Montage en surface
85°C
No SVHC (21-Jan-2025)
Documents techniques (1)
Législation et Questions environnementales
Pays dans lequel la dernière étape de production majeure est intervenuePays d'origine :Philippines
Pays dans lequel la dernière étape de production majeure est intervenue
RoHS
RoHS
Certificat de conformité du produit