BTS640S2GATMA1

The BTS640S2G is a N-channel high-side vertical Power FET Switch with charge pump, ground referenced CMOS compatible input and diagnostic feedback and proportional sense of load current, monolithically integrated in smart SIPMOS® technology. It provides embedded protective functions, under-voltage and overvoltage shutdown with auto-restart and hysteresis.

• Short-circuit protection
• Current limitation
• Proportional load current sense
• CMOS compatible input
• Open drain diagnostic output
• Fast demagnetization of inductive loads
• Overload protection
• Thermal shutdown
• Overvoltage protection including load dump
• Reverse battery protection
• Loss of ground and loss of VBB protection
• Electrostatic discharge (ESD) protection
• High voltage capability
• Benchmark energy robustness

Avertissements

ESD sensitive device, take proper precaution while handling the device. Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.