BFP650H6327XTSA1
Transistor RF - Bipolaire, NPN, 4.5 V, 42 GHz, 500 mW, 150 mA, SOT-343
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| Quantité | Prix (hors TVA) |
|---|---|
| 5+ | 0,391 € |
| 50+ | 0,243 € |
| 100+ | 0,211 € |
| 500+ | 0,186 € |
| 1500+ | 0,178 € |
Informations produit
Aperçu du produit
The BFP 650 H6327 is a NPN high linearity wideband Bipolar RF Transistor based on Infineon's reliable high volume silicon germanium carbon hetero-junction bipolar technology. With its high linearity at currents as low as 30mA the device supports energy efficient designs. The typical transition frequency is approximately 42GHz, hence the device offers high power gain at frequencies up to 5GHz in amplifier applications. The device is housed in an easy to use plastic package with visible leads.
- Linear low-noise driver amplifier
- Easy to use
- Halogen-free
Avertissements
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Spécifications techniques
NPN
42GHz
150mA
4Broche(s)
Montage en surface
-
MSL 1 - Illimité
4.5V
500mW
SOT-343
100hFE
150°C
AEC-Q101
No SVHC (21-Jan-2025)
Documents techniques (1)
Législation et Questions environnementales
Pays dans lequel la dernière étape de production majeure est intervenuePays d'origine :Malaysia
Pays dans lequel la dernière étape de production majeure est intervenue
RoHS
RoHS
Certificat de conformité du produit