1N5819HW1-7-F

1N5819HW1-7-F is a 1A SBR® super barrier rectifier. It offers low VF and excellent high-temperature stability. This device is ideal for use in general rectification applications as a boost diode, blocking diode.

• Low forward voltage (VF) minimizes conduction losses and improves efficiency
• Reduced high temperature reverse leakage
• Increased reliability against thermal runaway failure in high-temperature operation
• RMS reverse voltage is 28V at TA=+25°C
• Average rectified output current is 1A at TA=+25°C
• Reverse recovery time is 15ns typ at IF=10mA, IRRM=0.1IR, TA=+25°C
• Reverse breakdown voltage is 40V min at IR=1.0mA, TA=+25°C
• Forward voltage drop is 0.44V typ at IF=1A, TJ=+25°C
• SOD123F package
• Operating junction temperature range from -55 to +125°C

Avertissements

La forte demande du marché pour ce produit, entraîné une augmentation des délais. Les dates de livraison peuvent varier. Produit exempt de remises.