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Quantité | Prix (hors TVA) |
---|---|
1+ | 6,600 € |
10+ | 6,200 € |
25+ | 5,860 € |
50+ | 5,820 € |
100+ | 5,780 € |
250+ | 5,630 € |
500+ | 5,100 € |
Informations produit
Aperçu du produit
AS7C4096A-12JIN is a 5.0V 4Mb (512K × 8) CMOS fast SRAM. It is a high-performance CMOS 4,194,304-bit static random access memory (SRAM) device organized as 524,288 words × 8bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. The chip enable input active-low CE permits easy memory expansion with multiple-bank memory systems. When active-low CE is high the device enters standby mode. The device is guaranteed not to exceed 55mW power consumption in CMOS standby mode. All chip inputs and outputs are TTL-compatible, and operation is from a single 5.0V supply voltage.
- Center power and ground pins
- Low power consumption: 880mW/max at 10ns (active), 55mW/max CMOS (standby)
- Equal access and cycle times
- Easy memory expansion with active-low CE, active-low OE inputs
- TTL-compatible, three-state I/O
- JEDEC standard packages
- ESD protection is ≥ 2000volts
- Latch-up current is ≥ 200mA
- 12ns access time, SOJ package
- Industrial temperature range from -40°C to 85°C
Spécifications techniques
Asynchrône
512K x 8 bits
36Broche(s)
5.5V
-
-40°C
-
4Mbit
SOJ
4.5V
5V
Montage en surface
85°C
No SVHC (27-Jun-2024)
Documents techniques (1)
Législation et Questions environnementales
Pays dans lequel la dernière étape de production majeure est intervenuePays d'origine :Taiwan
Pays dans lequel la dernière étape de production majeure est intervenue
RoHS
RoHS
Certificat de conformité du produit