AS4C256M16D3LC-10BIN

AS4C256M16D3LC-10BIN is a 256M x 16-bit DDR3L synchronous DRAM (SDRAM). The 4Gb double-data-rate-3 (DDR3L) DRAM is a double data rate architecture to achieve high-speed operation. It is internally configured as an eight-bank DRAM. The 4Gb chip is organized as 32Mbit x 16 I/Os x8 bank devices. This synchronous device achieves high-speed double-data-rate transfer rates of up to 1866Mb/sec/pin for general applications. The chip is designed to comply with all key DDR3L DRAM key features and all of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and CK# falling). All I/Os are synchronized with differential DQS pairs in a source-synchronous fashion.

• JEDEC standard compliant, supports JEDEC clock jitter specification
• Power supplies: VDD and VDDQ=1.35V (1.283 to 1.45V), backward compatible to VDD and VDDQ=1.5±0.075V
• Fully synchronous operation, differential clock, CK and CK#
• Bidirectional differential data strobe, DQS & DQS#
• 8 internal banks for concurrent operation, 8n-bit prefetch architecture
• Pipelined internal architecture, precharge and active power down
• Programmable burst lengths: 4, 8, burst type: sequential/interleave
• Output driver impedance control, write levelling, ZQ calibration, auto refresh and self refresh
• Dynamic ODT (Rtt-Nom and Rtt-WR), 933MHz maximum clock
• 96-ball FBGA package, industrial temperature range from -40°C to 95°C