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RGT8NS65DGTL
IGBT, Field Stop Trench, 8 A, 1.65 V, 65 W, 650 V, TO-263S, 3 Pins
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| Quantity | Price (ex VAT) |
|---|---|
| 1+ | € 1.740 |
| 10+ | € 1.260 |
| 100+ | € 0.864 |
| 500+ | € 0.690 |
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Multiple: 1
€ 1.74 (ex VAT)
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Product Information
ManufacturerROHM
Manufacturer Part NoRGT8NS65DGTL
Order Code2519786
Technical Datasheet
Continuous Collector Current8A
Collector Emitter Saturation Voltage1.65V
Power Dissipation65W
Collector Emitter Voltage Max650V
Transistor Case StyleTO-263S
No. of Pins3Pins
Operating Temperature Max175°C
Transistor MountingSurface Mount
Product Range-
MSLMSL 1 - Unlimited
SVHCLead (23-Jan-2024)
Technical Specifications
Continuous Collector Current
8A
Power Dissipation
65W
Transistor Case Style
TO-263S
Operating Temperature Max
175°C
Product Range
-
SVHC
Lead (23-Jan-2024)
Collector Emitter Saturation Voltage
1.65V
Collector Emitter Voltage Max
650V
No. of Pins
3Pins
Transistor Mounting
Surface Mount
MSL
MSL 1 - Unlimited
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Japan
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Japan
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates CompliantYes
RoHS
SVHC:Lead (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002
Product traceability