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IRF135S203
Power MOSFET, StrongIRFET™, N Channel, 135 V, 129 A, 0.0067 ohm, TO-263 (D2PAK), Surface Mount
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRF135S203
Order Code2781106
Product RangeHEXFET
Also Known AsSP001570032
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds135V
Continuous Drain Current Id129A
Drain Source On State Resistance0.0067ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation441W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeHEXFET
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Alternatives for IRF135S203
2 Products Found
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
129A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
441W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
135V
Drain Source On State Resistance
0.0067ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
HEXFET
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates CompliantYes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001