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IPW60R125CPFKSA1
Power MOSFET, N Channel, 650 V, 25 A, 0.11 ohm, TO-247, Through Hole
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ManufacturerINFINEON
Manufacturer Part NoIPW60R125CPFKSA1
Order Code2212865
Also Known AsIPW60R125CP, SP000088489
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 17 week(s)
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| Quantity | Price (ex VAT) |
|---|---|
| 1+ | € 5.790 |
| 10+ | € 4.870 |
| 100+ | € 3.940 |
| 500+ | € 2.680 |
| 1000+ | € 2.630 |
Price for:Each
Minimum: 1
Multiple: 1
€ 5.79 (ex VAT)
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIPW60R125CPFKSA1
Order Code2212865
Also Known AsIPW60R125CP, SP000088489
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds650V
Continuous Drain Current Id25A
Drain Source On State Resistance0.11ohm
Transistor Case StyleTO-247
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation208W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The IPW60R125CP is a 650V CoolMOS™ N-channel Power MOSFET features ultra-low gate charge. It is designed for hard switching topologies, server and telecom applications.
- Low figure-of-merit(FOM) RON x Qg
- Extreme dV/dt rated
- High peak current capability
- Qualified according to JEDEC for target applications
- Very fast switching
- High current capability
- Significant reduction of conduction and switching losses
- High power density and efficiency for superior power conversion systems
- Best-in-class performance ratio
Applications
Industrial, Power Management, Communications & Networking, Consumer Electronics, Alternative Energy, Lighting
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
25A
Transistor Case Style
TO-247
Rds(on) Test Voltage
10V
Power Dissipation
208W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
650V
Drain Source On State Resistance
0.11ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (3)
Associated Products
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates CompliantYes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.008278
Product traceability