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SIHFU9220-GE3
Power MOSFET, P Channel, 200 V, 3.6 A, 1.5 ohm, TO-251 (IPAK), Through Hole
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| Quantity | Price (ex VAT) |
|---|---|
| 1+ | € 0.524 |
| 10+ | € 0.400 |
| 100+ | € 0.346 |
| 500+ | € 0.318 |
| 1000+ | € 0.312 |
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIHFU9220-GE3
Order Code3772823
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id3.6A
Drain Source On State Resistance1.5ohm
Transistor Case StyleTO-251 (IPAK)
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation42W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (07-Nov-2024)
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
3.6A
Transistor Case Style
TO-251 (IPAK)
Rds(on) Test Voltage
10V
Power Dissipation
42W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
200V
Drain Source On State Resistance
1.5ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
SVHC
Lead (07-Nov-2024)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates CompliantYes
RoHS
SVHC:Lead (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001
Product traceability