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Quantity | Price (ex VAT) |
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50+ | € 1.380 |
100+ | € 1.060 |
500+ | € 0.837 |
1000+ | € 0.780 |
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Multiple: 5
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4850EY-T1-E3
Order Code1470121
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id8.5A
Drain Source On State Resistance0.022ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation1.7W
No. of Pins8Pins
Operating Temperature Max175°C
Product Range-
Qualification-
Product Overview
The SI4850EY-T1-E3 is a TrenchFET® N-channel enhancement-mode Power MOSFET with reduced total dynamic gate charge (Qg).
- Fast switching
- 175°C Maximum junction temperature
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
8.5A
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Power Dissipation
1.7W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.022ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates CompliantYes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00026
Product traceability