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SI2315BDS-T1-GE3.
P CHANNEL MOSFET
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| Quantity | Price (ex VAT) |
|---|---|
| 1+ | € 0.790 |
| 10+ | € 0.559 |
| 25+ | € 0.500 |
| 50+ | € 0.441 |
| 100+ | € 0.381 |
| 250+ | € 0.350 |
| 500+ | € 0.318 |
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Multiple: 1
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2315BDS-T1-GE3.
Order Code1867177
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds12V
Continuous Drain Current Id3A
Drain Source On State Resistance0.04ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max900mV
Power Dissipation750mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
3A
Transistor Case Style
SOT-23
Rds(on) Test Voltage
4.5V
Power Dissipation
750mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
12V
Drain Source On State Resistance
0.04ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
900mV
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (2)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates CompliantYes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000044
Product traceability