Print Page
IRLD024PBF
Power MOSFET, N Channel, 60 V, 2.5 A, 0.1 ohm, DIP, Through Hole
Image is for illustrative purposes only. Please refer to product description.
2,867 In Stock
Need more?
1-2 Working Days Delivery
Order before 17:00 standard shipping
Available until stock is exhausted
| Quantity | Price (ex VAT) |
|---|---|
| 1+ | € 1.670 |
| 10+ | € 1.270 |
| 100+ | € 1.180 |
| 500+ | € 1.010 |
| 1000+ | € 0.983 |
Price for:Each
Minimum: 1
Multiple: 1
€ 1.67 (ex VAT)
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerVISHAY
Manufacturer Part NoIRLD024PBF
Order Code9102523
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id2.5A
Drain Source On State Resistance0.1ohm
Transistor Case StyleDIP
Transistor MountingThrough Hole
Rds(on) Test Voltage5V
Gate Source Threshold Voltage Max2V
Power Dissipation1W
No. of Pins4Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The IRLD024PBF is a 60V N-channel Power MOSFET, third generation power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is a low cost machine-insertiable case style which can be stacked in multiple combinations on standard 0.1-inch pin centres. The dual drain servers as a thermal link to the mounting surface for power dissipation levels up to 1W.
- Dynamic dV/dt rating
- Repetitive avalanche rated
- 175°C Operating temperature
- Easy to parallel
- Simple drive requirement
- For automatic insertion
- End stackable
Applications
Power Management
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
2.5A
Transistor Case Style
DIP
Rds(on) Test Voltage
5V
Power Dissipation
1W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.1ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
2V
No. of Pins
4Pins
Product Range
-
MSL
-
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates CompliantYes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00059