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NXH80T120L2Q0S2G
IGBT Module, PIM Half Bridge Inverter, 67 A, 2.35 V, 158 mW, 150 °C, PIM
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No Longer Stocked
Product Information
ManufacturerONSEMI
Manufacturer Part NoNXH80T120L2Q0S2G
Order Code2835631
Technical Datasheet
Transistor PolarityN Channel
IGBT ConfigurationPIM Half Bridge Inverter
DC Collector Current67A
Continuous Collector Current67A
Collector Emitter Saturation Voltage Vce(on)2.35V
Collector Emitter Saturation Voltage2.35V
Power Dissipation158mW
Power Dissipation Pd158mW
Junction Temperature Tj Max150°C
Operating Temperature Max150°C
Collector Emitter Voltage V(br)ceo1.2kV
Transistor Case StylePIM
IGBT TerminationSolder
No. of Pins20Pins
Collector Emitter Voltage Max1.2kV
IGBT TechnologyTrench Field Stop
Transistor MountingPanel
Product Range-
SVHCNo SVHC (15-Jan-2018)
Technical Specifications
Transistor Polarity
N Channel
DC Collector Current
67A
Collector Emitter Saturation Voltage Vce(on)
2.35V
Power Dissipation
158mW
Junction Temperature Tj Max
150°C
Collector Emitter Voltage V(br)ceo
1.2kV
IGBT Termination
Solder
Collector Emitter Voltage Max
1.2kV
Transistor Mounting
Panel
SVHC
No SVHC (15-Jan-2018)
IGBT Configuration
PIM Half Bridge Inverter
Continuous Collector Current
67A
Collector Emitter Saturation Voltage
2.35V
Power Dissipation Pd
158mW
Operating Temperature Max
150°C
Transistor Case Style
PIM
No. of Pins
20Pins
IGBT Technology
Trench Field Stop
Product Range
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates CompliantYes
RoHS
SVHC:No SVHC (15-Jan-2018)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.026838