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GANB012-040CBAZ
Gallium Nitride (GaN) Transistor, 10 A, 7.2 nC, WLCSP, Surface Mount
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Product Information
ManufacturerNEXPERIA
Manufacturer Part NoGANB012-040CBAZ
Order Code4748376
Technical Datasheet
Drain Source Voltage Vds-
Continuous Drain Current Id10A
Drain Source On State Resistance-
Typical Gate Charge7.2nC
Transistor Case StyleWLCSP
Transistor MountingSurface Mount
No. of Pins12Pins
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Drain Source Voltage Vds
-
Drain Source On State Resistance
-
Transistor Case Style
WLCSP
No. of Pins
12Pins
Qualification
-
Continuous Drain Current Id
10A
Typical Gate Charge
7.2nC
Transistor Mounting
Surface Mount
Product Range
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:To be advised
RoHS Phthalates CompliantTo be advised
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001
Product traceability