Print Page
IRFS7530TRLPBF
Power MOSFET, N Channel, 60 V, 295 A, 0.002 ohm, TO-263 (D2PAK), Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIRFS7530TRLPBF
Order Code2709996RL
Product RangeStrongIRFET HEXFET Series
Also Known AsSP001567992
Technical Datasheet
4,874 In Stock
Need more?
1-2 Working Days Delivery
Order before 17:00 standard shipping
| Quantity | Price (ex VAT) |
|---|---|
| 100+ | € 1.840 |
| 500+ | € 1.480 |
| 1000+ | € 1.300 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
€ 189.00 (ex VAT)
A € 5.00 re-reeling charge will be added for this product
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRFS7530TRLPBF
Order Code2709996RL
Product RangeStrongIRFET HEXFET Series
Also Known AsSP001567992
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id295A
Drain Source On State Resistance0.002ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.7V
Power Dissipation375W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeStrongIRFET HEXFET Series
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Product Overview
IRFS7530TRLPBF is a HEXFET® power MOSFET. Typical applications include brushed motor drive applications, BLDC motor drive applications, battery powered circuits, half-bridge and full-bridge topologies, synchronous rectifier applications, resonant mode power supplies, OR-ing and redundant power switches, DC/DC and AC/DC converters and DC/AC inverters.
- Improved gate, avalanche and dynamic dV/dt ruggedness
- Fully characterized capacitance and avalanche SOA
- Enhanced body diode dV/dt and dI/dt capability
- 375W maximum power dissipation at TC = 25°C
- 2.5W/°C linear derating factor
- ±20V gate-to-source voltage
- D2-Pak package
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
295A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
375W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.002ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3.7V
No. of Pins
3Pins
Product Range
StrongIRFET HEXFET Series
MSL
MSL 1 - Unlimited
Technical Docs (3)
Alternatives for IRFS7530TRLPBF
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates CompliantYes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001227
Product traceability