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| Quantity | Price (ex VAT) | 
|---|---|
| 1+ | € 1.610 | 
| 10+ | € 1.050 | 
| 100+ | € 0.686 | 
| 500+ | € 0.588 | 
| 1000+ | € 0.538 | 
| 5000+ | € 0.452 | 
Product Information
Product Overview
The IRF7342TRPBF is a dual P-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET Power MOSFET is extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized lead-frame for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space.
- Generation V technology
 - Ultra low ON-resistance
 - Surface-mount device
 - Dynamic dV/dt rating
 - Fast switching performance
 
Applications
Industrial, Power Management
Technical Specifications
P Channel
55V
3.4A
0.095ohm
8Pins
2W
-
-
55V
3.4A
0.095ohm
SOIC
2W
150°C
-
No SVHC (21-Jan-2025)
Associated Products
1 Product Found
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate