IRFZ44RPBF
Power MOSFET, N Channel, 60 V, 50 A, 0.028 ohm, TO-220AB, Through Hole
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| Quantity | Price (ex VAT) |
|---|---|
| 1+ | € 2.860 |
| 10+ | € 2.640 |
| 100+ | € 1.520 |
| 500+ | € 1.350 |
| 1000+ | € 1.130 |
| 5000+ | € 1.070 |
Product Information
Product Overview
The IRFZ44RPBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. This Power device utilize advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit, combined with the ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The package is universally preferred for power dissipation levels to approximately 50W. The low thermal resistance of the package contributes to its wide acceptance throughout the industry.
- Advanced process technology
- Ultra-low ON-resistance
- Dynamic dV/dt rating
- -55 to 175°C Operating temperature range
- Fully avalanche rated
Applications
Industrial, Power Management, Audio
Technical Specifications
N Channel
50A
TO-220AB
10V
150W
175°C
-
60V
0.028ohm
Through Hole
4V
3Pins
-
Lead (21-Jan-2025)
Technical Docs (2)
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Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate