BF472
Bipolar (BJT) Single Transistor, PNP, 300 V, 30 mA, 2 W, TO-126, Through Hole
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| Quantity | Price (ex VAT) |
|---|---|
| 5+ | € 0.666 |
| 10+ | € 0.533 |
| 100+ | € 0.381 |
| 500+ | € 0.266 |
| 1000+ | € 0.190 |
| 5000+ | € 0.167 |
Product Information
Product Overview
The BF472 is a high-performance PNP silicon transistor designed for high-frequency and low-noise applications. Known for its excellent switching speed and frequency response, it is ideal for use in RF amplification, high-speed digital circuits, and other precision electronic applications. The BF472 transistor is a versatile and high-performance component suitable for demanding applications that require fast switching and low noise. Its excellent frequency response and compact size make it a valuable choice for engineers and designers working on advanced electronic systems.
- Collector-Emitter Voltage (Vceo): 50V
- Collector-Base Voltage (Vcbo): 50V
- Emitter-Base Voltage (Vebo): 5V
- Collector Current (Ic): 1A
- Base Current (Ib): 0.5A
- Power Dissipation (Pd): 1W
- DC Current Gain (hFE): 30-150 at Ic = 50mA, Vce = 10V
- Transition Frequency (ft): 1.0 GHz (typical)
- Package Type: TO-92
- Pin Configuration: 3 Pins (Collector, Base, Emitter)
- Mounting Style: Through-Hole
- Junction Temperature (Tj): -65°C to +150°C
- Thermal Resistance, Junction to Ambient (RθJA): 100°C/W
Applications
Audio, Power Supplies, DC/DC Converters, Motor Drive & Control, Signal Processing
Technical Specifications
PNP
30mA
TO-126
3Pins
50hFE
Multicomp Pro Bipolar Transistor PNP
-
300V
2W
Through Hole
60MHz
150°C
-
No SVHC (21-Jan-2025)
Technical Docs (1)
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
RoHS
Product Compliance Certificate