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IXDN75N120
IGBT Module, Single, 150 A, 2.2 V, 660 W, 150 °C, SOT-227B
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No Longer Stocked
Product Information
ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXDN75N120
Order Code3438369
Technical Datasheet
Transistor PolarityNPN
IGBT ConfigurationSingle
Continuous Collector Current150A
DC Collector Current150A
Collector Emitter Saturation Voltage2.2V
Collector Emitter Saturation Voltage Vce(on)2.2V
Power Dissipation Pd660W
Power Dissipation660W
Junction Temperature Tj Max150°C
Operating Temperature Max150°C
Collector Emitter Voltage V(br)ceo1.2kV
Transistor Case StyleSOT-227B
IGBT TerminationStud
No. of Pins4Pins
Collector Emitter Voltage Max1.2kV
IGBT TechnologyNPT IGBT [Standard]
Transistor MountingPanel
Product Range-
SVHCNo SVHC (17-Jan-2023)
Technical Specifications
Transistor Polarity
NPN
Continuous Collector Current
150A
Collector Emitter Saturation Voltage
2.2V
Power Dissipation Pd
660W
Junction Temperature Tj Max
150°C
Collector Emitter Voltage V(br)ceo
1.2kV
IGBT Termination
Stud
Collector Emitter Voltage Max
1.2kV
Transistor Mounting
Panel
SVHC
No SVHC (17-Jan-2023)
IGBT Configuration
Single
DC Collector Current
150A
Collector Emitter Saturation Voltage Vce(on)
2.2V
Power Dissipation
660W
Operating Temperature Max
150°C
Transistor Case Style
SOT-227B
No. of Pins
4Pins
IGBT Technology
NPT IGBT [Standard]
Product Range
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates CompliantYes
RoHS
SVHC:No SVHC (17-Jan-2023)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.004