INFINEON Semiconductors - Discretes

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Drain Source Voltage Vds Continuous Drain Current Id Drain Source On State Resistance Rds(on) Test Voltage Gate Source Threshold Voltage Max Power Dissipation No. of Pins Operating Temperature Max
 
 
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IPP041N04NGXKSA1
IPP041N04NGXKSA1 - Power MOSFET, N Channel, 40 V, 80 A, 0.0033 ohm, TO-220, Through Hole

1775620

Power MOSFET, N Channel, 40 V, 80 A, 0.0033 ohm, TO-220, Through Hole

INFINEON

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40V 80A 0.0033ohm 10V 2V 94W 3Pins 175°C
IRFB3207PBF
IRFB3207PBF - Power MOSFET, N Channel, 75 V, 180 A, 0.0036 ohm, TO-220AB, Through Hole

9052070

Power MOSFET, N Channel, 75 V, 180 A, 0.0036 ohm, TO-220AB, Through Hole

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75V 180A 0.0036ohm 10V 4V 330W 3Pins 175°C
BFP740ESDH6327XTSA1
BFP740ESDH6327XTSA1 - Bipolar - RF Transistor, NPN, 4.7 V, 45 GHz, 160 mW, 45 mA, SOT-343

2432736

Bipolar - RF Transistor, NPN, 4.7 V, 45 GHz, 160 mW, 45 mA, SOT-343

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- - - - - 160mW 4Pins 150°C
BAS16E6433HTMA1
BAS16E6433HTMA1 - Small Signal Diode, Single, 80 V, 250 mA, 1.25 V, 4 ns, 4.5 A

2443486

Small Signal Diode, Single, 80 V, 250 mA, 1.25 V, 4 ns, 4.5 A

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BFR182WH6327XTSA1
BFR182WH6327XTSA1 - Bipolar - RF Transistor, NPN, 12 V, 8 GHz, 250 mW, 35 mA, SOT-323

2480679

Bipolar - RF Transistor, NPN, 12 V, 8 GHz, 250 mW, 35 mA, SOT-323

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- - - - - 250mW 3Pins 150°C
FS30R06VE3BOMA1
FS30R06VE3BOMA1 - IGBT Module, Six Pack [Full Bridge], 34 A, 1.55 V, 88 W, 150 °C, Module

2781260

IGBT Module, Six Pack [Full Bridge], 34 A, 1.55 V, 88 W, 150 °C, Module

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- - - - - 88W - 150°C
BSC0910NDIATMA1
BSC0910NDIATMA1 - Dual MOSFET, N Channel, 25 V, 25 V, 40 A, 40 A, 0.0035 ohm

2839431

Dual MOSFET, N Channel, 25 V, 25 V, 40 A, 40 A, 0.0035 ohm

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- - - - - - 8Pins 150°C
AIKB20N60CTATMA1
AIKB20N60CTATMA1 - IGBT, 40 A, 1.5 V, 156 W, 600 V, TO-263 (D2PAK), 3 Pins

2986332

IGBT, 40 A, 1.5 V, 156 W, 600 V, TO-263 (D2PAK), 3 Pins

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- - - - - 156W 3Pins 150°C
IPN70R600P7SATMA1
IPN70R600P7SATMA1 - Power MOSFET, N Channel, 700 V, 8.5 A, 0.49 ohm, SOT-223, Surface Mount

2986474

Power MOSFET, N Channel, 700 V, 8.5 A, 0.49 ohm, SOT-223, Surface Mount

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700V 8.5A 0.49ohm 10V 3V 6.9W 3Pins 150°C
IM564X6DXKMA1
IM564X6DXKMA1 - Intelligent Power Module (IPM), IGBT, MOSFET, 600 V, 20 A, 2 kV, DIP, CIPOS Mini

3373686

Intelligent Power Module (IPM), IGBT, MOSFET, 600 V, 20 A, 2 kV, DIP, CIPOS Mini

INFINEON

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IRFP1405PBF
IRFP1405PBF - Power MOSFET, N Channel, 55 V, 160 A, 0.0053 ohm, TO-247AC, Through Hole

8658382

Power MOSFET, N Channel, 55 V, 160 A, 0.0053 ohm, TO-247AC, Through Hole

INFINEON

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55V 160A 0.0053ohm 10V 4V 310W 3Pins 175°C
IRFB7530PBF
IRFB7530PBF - Power MOSFET, N Channel, 60 V, 195 A, 0.002 ohm, TO-220AB, Through Hole

2406514

Power MOSFET, N Channel, 60 V, 195 A, 0.002 ohm, TO-220AB, Through Hole

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60V 195A 0.002ohm 10V 3.7V 375W 3Pins 175°C
IRFS7534TRLPBF
IRFS7534TRLPBF - Power MOSFET, N Channel, 60 V, 195 A, 0.002 ohm, TO-263AB, Surface Mount

2406526

Power MOSFET, N Channel, 60 V, 195 A, 0.002 ohm, TO-263AB, Surface Mount

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60V 195A 0.002ohm 10V 3.7V 294W 3Pins 175°C
BAV170E6327HTSA1
BAV170E6327HTSA1 - RF / Pin Diode, Dual Common Cathode, 80 V, SOT-23, 3 Pin, 2 pF

2443507

RF / Pin Diode, Dual Common Cathode, 80 V, SOT-23, 3 Pin, 2 pF

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- - - - - 250mW - 150°C
IRFB7537PBF
IRFB7537PBF - Power MOSFET, N Channel, 60 V, 173 A, 0.00275 ohm, TO-220AB, Through Hole

2406516

Power MOSFET, N Channel, 60 V, 173 A, 0.00275 ohm, TO-220AB, Through Hole

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60V 173A 0.00275ohm 10V 3.7V 230W 3Pins 175°C
BFR840L3RHESDE6327XTSA1
BFR840L3RHESDE6327XTSA1 - Bipolar - RF Transistor, NPN, 2.25 V, 75 GHz, 75 mW, 35 mA, TSLP

2480687

Bipolar - RF Transistor, NPN, 2.25 V, 75 GHz, 75 mW, 35 mA, TSLP

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- - - - - 75mW 3Pins 150°C
BFR340FH6327XTSA1
BFR340FH6327XTSA1 - Bipolar - RF Transistor, NPN, 6 V, 14 GHz, 75 mW, 20 mA, TSFP

2480680

Bipolar - RF Transistor, NPN, 6 V, 14 GHz, 75 mW, 20 mA, TSFP

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- - - - - 75mW 3Pins 150°C
IRF6668TRPBF
IRF6668TRPBF - Power MOSFET, N Channel, 80 V, 55 A, 0.015 ohm, DirectFET MZ, Surface Mount

2579988

Power MOSFET, N Channel, 80 V, 55 A, 0.015 ohm, DirectFET MZ, Surface Mount

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80V 55A 0.015ohm 10V 4.9V 89W 7Pins 150°C
IGCM20F60GAXKMA1
IGCM20F60GAXKMA1 - Motor Driver/Controller, Three Phase AC, 13.5V to 18.5V, 600V/20A/6 Outputs, DIP-24

2762333

Motor Driver/Controller, Three Phase AC, 13.5V to 18.5V, 600V/20A/6 Outputs, DIP-24

INFINEON

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IRF7503TRPBF
IRF7503TRPBF - Dual MOSFET, N Channel, 30 V, 30 V, 2.4 A, 2.4 A, 0.135 ohm

2577148

Dual MOSFET, N Channel, 30 V, 30 V, 2.4 A, 2.4 A, 0.135 ohm

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IRF6775MTRPBF
IRF6775MTRPBF - Power MOSFET, N Channel, 150 V, 28 A, 0.047 ohm, DirectFET MZ, Surface Mount

2725895

Power MOSFET, N Channel, 150 V, 28 A, 0.047 ohm, DirectFET MZ, Surface Mount

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150V 28A 0.047ohm 10V 5V 89W 7Pins 150°C
IPP086N10N3GXKSA1
IPP086N10N3GXKSA1 - Power MOSFET, N Channel, 100 V, 80 A, 0.0074 ohm, TO-220, Through Hole

2709893

Power MOSFET, N Channel, 100 V, 80 A, 0.0074 ohm, TO-220, Through Hole

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100V 80A 0.0074ohm 10V 2.7V 125W 3Pins 175°C
BAT5405E6327HTSA1
BAT5405E6327HTSA1 - Small Signal Schottky Diode, Dual Common Cathode, 30 V, 200 mA, 800 mV, 600 mA, 150 °C

2725759

Small Signal Schottky Diode, Dual Common Cathode, 30 V, 200 mA, 800 mV, 600 mA, 150 °C

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AUIRF7316QTR
AUIRF7316QTR - Dual MOSFET, P Channel, 30 V, 30 V, 4.9 A, 4.9 A, 0.042 ohm

2725789

Dual MOSFET, P Channel, 30 V, 30 V, 4.9 A, 4.9 A, 0.042 ohm

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- - - - - - 8Pins 150°C
IDM08G120C5XTMA1
IDM08G120C5XTMA1 - Silicon Carbide Schottky Diode, thinQ 5G 1200V, Single, 1.2 kV, 27 A, 28 nC, TO-252 (DPAK)

2780806

Silicon Carbide Schottky Diode, thinQ 5G 1200V, Single, 1.2 kV, 27 A, 28 nC, TO-252 (DPAK)

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- - - - - - - 175°C