Low

TPS62125DSGT - 

Régulateur DC/DC à découpage Buck (Step Down), Ajustable, 3V-17Vin, 1.2V-10Vout, 300mAout, WSON-8

TEXAS INSTRUMENTS TPS62125DSGT

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Réf. Fabricant:
TPS62125DSGT
Code Commande :
2144287
Fiche technique:
(EN)
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Informations produit

:
WSON
:
Bande découpée
:
1Sortie(s)
:
-
:
3V
:
-
:
85°C
:
17V
:
1MHz
:
Buck Synchrone (Abaisseur)
:
1.2V
:
10V
:
300mA
:
8Broche(s)
:
MSL 2 - 1 an
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Aperçu du produit

The TPS62125DSGT is a 300mA High Efficiency Synchronous Buck Converter with adjustable enable threshold and hysteresis. This step-down converter is optimized for low and ultralow power applications providing up to 300mA output current. The device includes a precise low-power enable comparator which can be used as an input supply voltage supervisor (SVS) to address system specific power-up and power-down requirements. With this feature, the converter can generate a power supply rail by extracting energy from a storage capacitor fed from high impedance sources such as solar panels or current loops. With its DCS-Control scheme the converter provides power-save mode operation to maintain highest efficiency over the entire load current range. At light loads the converter operates in pulse frequency modulation (PFM) mode and transitions seamlessly and automatically in pulse width modulation (PWM) mode at higher load currents.
  • Input SVS with adjustable threshold and hysteresis consuming 6µA typical quiescent current
  • 13µA Typical quiescent current
  • 350nA Typical shutdown current
  • Seamless power save mode transition
  • DCS-Control™ scheme
  • Low output ripple voltage
  • Highest efficiency over wide VIN and VOUT range
  • Pin to pin compatible with TPS62160/70
  • 100% Duty cycle mode
  • Power good open drain output
  • Output discharge function
  • Green product and no Sb/Br

Applications

Traitement du Signal, Gestion d'alimentation

Avertissements

This device has limited built-in ESD protection, leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

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