Low

TPS54140ADGQ - 

Régulateur DC/DC à découpage Buck (Step Down), Ajustable, 3.5V-42Vin, 800mV-39Vout, 1.5Aout, MSOP-10

TEXAS INSTRUMENTS TPS54140ADGQ

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Réf. Fabricant:
TPS54140ADGQ
Code Commande :
2144280
Fiche technique:
(EN)
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Informations produit

:
MSOP
:
Bande découpée
:
1Sortie(s)
:
-
:
3.5V
:
-
:
150°C
:
42V
:
2.5MHz
:
Buck (Abaisseur)
:
800mV
:
39V
:
1.5A
:
10Broche(s)
:
MSL 1 - Illimité
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Aperçu du produit

The TPS54140ADGQ is a 42V 1.5A Step-down Converter with an integrated high-side MOSFET and Eco-mode™. Current-mode control provides simple external compensation and flexible component selection. A low ripple-pulse skip mode reduces the no-load, regulated output supply current to 116µA. Using the enable pin, shutdown supply current is reduced to 1.3µA. Under-voltage lockout is internally set at 2.5V, but can be increased using the enable pin. The output voltage start-up ramp is controlled by the slow start pin that can also be configured for sequencing/tracking. An open drain power good signal indicates the output is within 94 to 107% of its nominal voltage. A wide switching frequency range allows efficiency and external component size to be optimized. Frequency fold back and thermal shutdown protects the part during an overload condition.
  • 200mR High-side MOSFET
  • High efficiency at light loads with a pulse-skipping Eco-mode™
  • Tighter enable threshold than TPS54140 for more accurate UVLO voltage
  • Adjustable UVLO voltage and hysteresis
  • 116µA Operating quiescent current
  • 1.3µA Shutdown current
  • 100kHz to 2.5MHz Switching frequency
  • Synchronizes to external clock
  • Adjustable slow start/sequencing
  • UV and OV power-good output
  • 0.8V Internal voltage reference
  • Green product and no Sb/Br

Applications

Industrie, Commercial, Gestion d'alimentation, Imagerie, Video et Vision, Electronique Grand Public

Avertissements

This device has limited built-in ESD protection, leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

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