Low

DS8922AM/NOPB - 

Récepteur de ligne RS422, 2 drivers, Alimentation 4.5V-5.5V, SOIC-16

TEXAS INSTRUMENTS DS8922AM/NOPB

L'image a des fins d'illustration uniquement. Veuillez lire la description du produit.

Réf. Fabricant:
DS8922AM/NOPB
Code Commande :
1469015
Fiche technique:
(EN)
Découvrez tous les documents techniques

Informations produit

:
0°C
:
5.5V
:
Pièce
:
-
:
2Driver(s)
:
-
:
2Receivers
:
70°C
:
4.5V
:
RS422
:
16Broche(s)
:
SOIC
:
Driver / Récepteur de ligne
:
MSL 1 - Illimité
Trouver des produits similaires Sélectionnez et modifiez les attributs ci-dessus pour trouver des produits similaires.

Aperçu du produit

The DS8922AM/NOPB is a dual differential Line Driver and Receiver Pair designed specifically for applications meeting the ST506, ST412 and ESDI Disk Drive Standards. In addition, the device meets the requirements of the EIA Standard RS-422. This device offers an input sensitivity of 200mV over a ±7V common mode operating range. Hysteresis is incorporated (typically 70mV) to improve noise margin for slowly changing input waveforms. An input fail-safe circuit is provided such that if the receiver inputs are open the output assumes the logical one state. The DS8922A driver is designed to provide unipolar differential drive to twisted pair or parallel wire transmission lines. Complementary outputs are logically ANDed and provide an output skew of 0.5ns typical with propagation delays of 12ns. This device features TRI-STATE outputs. The device has an independent control functions common to a driver and receiver pair and has separate driver and receiver control functions.
  • 12ns Typical propagation delay
  • 0.5ns Typical output skew
  • 70mV Typical receiver hysteresis
  • Meets the requirements of EIA standard RS-422
  • Complementary driver outputs
  • Receiver input fail-safe circuitry
  • Glitch-free power up/down
  • Green product and no Sb/Br

Applications

Industrie

Avertissements

This device has limited built-in ESD protection, leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

Produits associés

Comparer les produits sélectionnés