Low

IRFL4310TRPBF - 

Transistor MOSFET, Canal N, 1.6 A, 100 V, 200 mohm, 10 V, 4 V

INFINEON IRFL4310TRPBF

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Réf. Fabricant:
IRFL4310TRPBF
Code Commande :
2101416
Fiche technique:
(EN)
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Informations produit

:
100V
:
10V
:
-
:
Canal N
:
-
:
4V
:
150°C
:
1W
:
SOT-223
:
1.6A
:
4Broche(s)
:
MSL 1 - Illimité
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Aperçu du produit

The IRFL4310TRPBF is a HEXFET® fifth generation N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. The package is designed for surface-mount using vapour phase, infrared or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heat sinking. Power dissipation of 1W is possible in a typical surface-mount application.
  • Dynamic dV/dt rating
  • Ease of paralleling
  • Advanced process technology
  • Low static drain-to-source ON-resistance

Applications

Automobile, Gestion d'alimentation